elektronische bauelemente 2SC2229 50ma , 200v npn plastic encapsulated transistor 12-dec-2014 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 3 b ase 1 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features high breakdown voltage high transition frequency absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 200 v collector to emitter voltage v ceo 150 v emitter to base voltage v ebo 5 v collector current - continuous i c 50 ma collector power dissipation p c 800 mw thermal resistance, junction to ambient r ja 156 c/w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 200 - - v i c =100 a, i e =0 collector to emitter breakdown voltage v (br)ceo 150 - - v i c =1ma, i b =0 emitter to base breakdown voltage v (br)ebo 5 - - v i e =100 a, i c =0 collector cut-off current i cbo - - 0.1 a v cb =200v, i e =0 emitter cut-off current i ebo - - 0.1 a v eb =5v, i c =0 70 - 240 v ce =5v, i c =10ma 50 - - v ce =5v, i c =1ma dc current gain h fe 50 - - v ce =5v, i c =50ma collector to emitter saturation voltage v ce(sat) - - 0.5 v i c =10ma, i b =1ma base to emitter saturation voltage v be - - 1 v i c =10ma, i b =1ma transition frequency f t 80 - - mhz v ce =30v, i c =10ma to-92mod 1 11 1 emitter 2 22 2 collector 3 33 3 base millimeter millimeter ref. min. max. ref. min. max. a 5.50 6.50 h 1. 70 2.05 b 8.00 9.00 j 2.70 3.20 c 12.70 14.50 k 0.85 1.15 d 4.50 5.30 l 1.60 max e 0.35 0.65 m 0.00 0.40 f 0.30 0.51 n 4.00 min g 1.50 typ. a c e k f d b g h j l m n
elektronische bauelemente 2SC2229 50ma , 200v npn plastic encapsulated transistor 12-dec-2014 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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